XP60AN4K8J N-CHANNEL ENHANCEMENT MODE POWER MOSFET

YAGEO

Description

XP60AN4K8J Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% UIS Test D ▼ Simple Drive Requirement ▼ Fast Switching Characterist.
XP60AN4K8 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance.

📥 Download Datasheet

XP60AN4K8J Datasheet Preview — Preview of XP60AN4K8J PDF

Datasheet Specifications

Part number: XP60AN4K8J
Manufacturer: YAGEO
File Size: 136.28 KB
Datasheet: XP60AN4K8J-YAGEO.pdf
Description: N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Applications

* The straight lead version TO-251 package is widely preferred for all commercial-industrial through hole applications. BVDSS RDS(ON) ID3 600V 4.8Ω 1.8A G DS TO-251(J) Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol Parameter Rating Units VDS Drain-Source Voltage 600

XP60AN4K8J Distributors

📁 Related Datasheet

XP6111 XP6112 XP6113 XP6114 XP6115 XP6116

📌 All Tags

XP60AN4K8J N-CHANNEL ENHANCEMENT MODE POWER MOSFET YAGEO

YAGEO XP60AN4K8J-like datasheet