XP60AN4K8K N-CHANNEL ENHANCEMENT MODE POWER MOSFET

YAGEO

Description

XP60AN4K8K Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% UIS Test D ▼ Simple Drive Requirement ▼ Fast Switching Characterist.
XP60AN4K8 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance.

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Datasheet Specifications

Part number: XP60AN4K8K
Manufacturer: YAGEO
File Size: 149.63 KB
Datasheet: XP60AN4K8K-YAGEO.pdf
Description: N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Applications

* The SOT-223 package is designed for suface mount application, larger heatsink than SO-8 and SOT package. BVDSS RDS(ON) ID3 600V 4.8Ω 1.8A D SOT-223 S D G Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol Parameter Rating Units VDS Drain-Source Voltage 600 V VGS ID@T

XP60AN4K8K Distributors

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XP60AN4K8K N-CHANNEL ENHANCEMENT MODE POWER MOSFET YAGEO

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