XP65AN470I N-CHANNEL ENHANCEMENT MODE POWER MOSFET

YAGEO

Description

XP65AN470I Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Rg & UIS Test D ▼ Simple Drive Requirement ▼ Fast Switching Charact.
XP65AN470 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance.

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Datasheet Specifications

Part number: XP65AN470I
Manufacturer: YAGEO
File Size: 212.63 KB
Datasheet: XP65AN470I-YAGEO.pdf
Description: N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Applications

* The TO-220CFM package is widely preferred for all commercialindustrial through hole applications. The mold compound provides a high isolation voltage capability and low thermal resistance between the tab and the external heat-sink. BVDSS RDS(ON) ID3 650V 0.47Ω 14A G DS TO-220CFM(I) Absolute M

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XP65AN470I N-CHANNEL ENHANCEMENT MODE POWER MOSFET YAGEO

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