XP6677GH P-CHANNEL ENHANCEMENT MODE POWER MOSFET

YAGEO

Description

XP6677GH Halogen-Free Product P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Lower On-resistance D ▼ Simple Drive Requirement ▼ Fast Switching Characte.
XP6677 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance.

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Datasheet Specifications

Part number: XP6677GH
Manufacturer: YAGEO
File Size: 208.56 KB
Datasheet: XP6677GH-YAGEO.pdf
Description: P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Applications

* The TO-252 package is widely preferred for all commercial-industrial surface mount applications using infrared reflow technique and suited for high current application due to the low connection resistance. BVDSS RDS(ON) ID -40V 12.3mΩ -60A GD S TO-252(H) Absolute Maximum Ratings@Tj=25oC(unless

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XP6677GH P-CHANNEL ENHANCEMENT MODE POWER MOSFET YAGEO

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