XP6N021M N-CHANNEL ENHANCEMENT MODE POWER MOSFET

YAGEO

Description

XP6N021M Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Lower Gate Charge ▼ Simple Drive Requirement ▼ Fast Switching Characteristic .
XP6N021 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance.

📥 Download Datasheet

XP6N021M Datasheet Preview — Preview of XP6N021M PDF

Datasheet Specifications

Part number: XP6N021M
Manufacturer: YAGEO
File Size: 243.46 KB
Datasheet: XP6N021M-YAGEO.pdf
Description: N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Applications

* The SO-8 package is widely preferred for all commercial-industrial surface mount applications using infrared reflow technique and suited for voltage conversion or switch applications. BVDSS RDS(ON) ID3 G 60V 21mΩ 7.8A D S Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol Par

XP6N021M Distributors

📁 Related Datasheet

XP6111 XP6112 XP6113 XP6114 XP6115 XP6116

📌 All Tags

XP6N021M N-CHANNEL ENHANCEMENT MODE POWER MOSFET YAGEO

YAGEO XP6N021M-like datasheet