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XP6N090LK N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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Description

XP6N090LK Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement ▼ Lower Gate Charge ▼ Fast Switching Characteristic.
XP6N090L series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance.

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Datasheet Specifications

Part number
XP6N090LK
Manufacturer
YAGEO
File Size
191.15 KB
Datasheet
XP6N090LK-YAGEO.pdf
Description
N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Applications

* The SOT-223 package is designed for suface mount application, larger heatsink than SO-8 and SOT package. BVDSS RDS(ON) ID3 G 60V 90mΩ 4.1A D S Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol Parameter Rating Units VDS Drain-Source Voltage 60 V VGS ID@TA=25℃ ID@TA=70℃

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