XP6N090G - N-CHANNEL ENHANCEMENT MODE POWER MOSFET
XP6N090 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance.
It provides the designer with an extreme efficient device for use in a wide range of power applications.
BVDSS RDS(ON) ID G 60V 90mΩ 2.7A D S Absolute Ma
