XP6N090G N-CHANNEL ENHANCEMENT MODE POWER MOSFET

YAGEO

Description

XP6N090G Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low Gate Charge D ▼ Fast Switching Characteristic ▼ Simple Drive Requireme.
XP6N090 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance.

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Datasheet Specifications

Part number: XP6N090G
Manufacturer: YAGEO
File Size: 205.96 KB
Datasheet: XP6N090G-YAGEO.pdf
Description: N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Applications

* BVDSS RDS(ON) ID G 60V 90mΩ 2.7A D S Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol Parameter Rating Units VDS Drain-Source Voltage 60 V VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Gate-Source Voltage Drain Current, VGS @ 10V3 Drain Current, VGS @ 10V3 Pulsed Dra

XP6N090G Distributors

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XP6N090G N-CHANNEL ENHANCEMENT MODE POWER MOSFET YAGEO

YAGEO XP6N090G-like datasheet