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XP6N090G Datasheet - YAGEO

XP6N090G - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

XP6N090 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance.

It provides the designer with an extreme efficient device for use in a wide range of power applications.

BVDSS RDS(ON) ID G 60V 90mΩ 2.7A D S Absolute Ma

XP6N090G-YAGEO.pdf

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Datasheet Details

Part number:

XP6N090G

Manufacturer:

YAGEO

File Size:

205.96 KB

Description:

N-channel enhancement mode power mosfet.

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