XP6N090K N-CHANNEL ENHANCEMENT MODE POWER MOSFET

YAGEO

Description

XP6N090K Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement ▼ Lower Gate Charge ▼ Fast Switching Characteristic .
XP6N090 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance.

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Datasheet Specifications

Part number: XP6N090K
Manufacturer: YAGEO
File Size: 191.14 KB
Datasheet: XP6N090K-YAGEO.pdf
Description: N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Applications

* The SOT-223 package is designed for suface mount application, larger heatsink than SO-8 and SOT package. BVDSS RDS(ON) ID3 G 60V 90mΩ 4.1A D S Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol Parameter Rating Units VDS Drain-Source Voltage 60 V VGS ID@TA=25℃ ID@TA=70℃

XP6N090K Distributors

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XP6N090K N-CHANNEL ENHANCEMENT MODE POWER MOSFET YAGEO

YAGEO XP6N090K-like datasheet