XP6N090Y N-CHANNEL ENHANCEMENT MODE POWER MOSFET

YAGEO

Description

XP6N090Y Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement ▼ Lower Gate Charge ▼ Fast Switching Characteristic .
XP6N090 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance.

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Datasheet Specifications

Part number: XP6N090Y
Manufacturer: YAGEO
File Size: 231.86 KB
Datasheet: XP6N090Y-YAGEO.pdf
Description: N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Applications

* The SOT-26 package is widely used for all commercial-industrial applications. BVDSS RDS(ON) ID3 G 60V 90mΩ 3.5A D S Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol Parameter Rating Units VDS Drain-Source Voltage 60 V VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Ga

XP6N090Y Distributors

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XP6N090Y N-CHANNEL ENHANCEMENT MODE POWER MOSFET YAGEO

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