XP6N021YT N-CHANNEL ENHANCEMENT MODE POWER MOSFET

YAGEO

Description

XP6N021YT Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Lower Gate Charge D ▼ Simple Drive Requirement ▼ Fast Switching Character.
XP6N021 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance.

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Datasheet Specifications

Part number: XP6N021YT
Manufacturer: YAGEO
File Size: 282.53 KB
Datasheet: XP6N021YT-YAGEO.pdf
Description: N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Applications

* The PMPAK ® 3 x 3 package is special for voltage conversion application using standard infrared reflow technique with the backside heat sink to achieve the good thermal performance. BVDSS RDS(ON) 60V 21mΩ D D D D S S S G PMPAK® 3 x 3 Absolute Maximum Ratings@Tj=25oC(unless otherwise specifie

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XP6N021YT N-CHANNEL ENHANCEMENT MODE POWER MOSFET YAGEO

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