XP6N100H N-CHANNEL ENHANCEMENT MODE POWER MOSFET

YAGEO

Description

XP6N100H Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Rg & UIS Test D ▼ Simple Drive Requirement ▼ Fast Switching Character.
XP6N100 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance.

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Datasheet Specifications

Part number: XP6N100H
Manufacturer: YAGEO
File Size: 180.39 KB
Datasheet: XP6N100H-YAGEO.pdf
Description: N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Applications

* BVDSS RDS(ON) ID 60V 100mΩ 7.5A G D S TO-252(H) The TO-252 package is widely preferred for all commercial-industrial surface mount applications using infrared reflow technique and suited for high current application due to the low connection resistance. Absolute Maximum Ratings@Tj=25oC(unles

XP6N100H Distributors

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XP6N100H N-CHANNEL ENHANCEMENT MODE POWER MOSFET YAGEO

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