Datasheet4U Logo Datasheet4U.com

XP6N100H Datasheet - YAGEO

XP6N100H N-CHANNEL ENHANCEMENT MODE POWER MOSFET

XP6N100 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. BVDSS RDS(ON) ID 60V 100mΩ 7.5A G D S TO-252(H.

XP6N100H-YAGEO.pdf

Preview of XP6N100H PDF
XP6N100H Datasheet Preview Page 2 XP6N100H Datasheet Preview Page 3

Datasheet Details

Part number:

XP6N100H

Manufacturer:

YAGEO

File Size:

180.39 KB

Description:

N-channel enhancement mode power mosfet.

XP6N100H Distributor

📁 Related Datasheet

XP6N100JV N-CHANNEL ENHANCEMENT MODE POWER MOSFET (YAGEO)

XP6N021M N-CHANNEL ENHANCEMENT MODE POWER MOSFET (YAGEO)

XP6N021YT N-CHANNEL ENHANCEMENT MODE POWER MOSFET (YAGEO)

XP6N023H-AT N-CHANNEL ENHANCEMENT MODE POWER MOSFET (YAGEO)

XP6N036H N-CHANNEL ENHANCEMENT MODE POWER MOSFET (YAGEO)

XP6N090G N-CHANNEL ENHANCEMENT MODE POWER MOSFET (YAGEO)

XP6N090K N-CHANNEL ENHANCEMENT MODE POWER MOSFET (YAGEO)

XP6N090LK N-CHANNEL ENHANCEMENT MODE POWER MOSFET (YAGEO)

TAGS

XP6N100H XP6N100H N-CHANNEL ENHANCEMENT MODE POWER MOSFET YAGEO