XP6N100JV N-CHANNEL ENHANCEMENT MODE POWER MOSFET

YAGEO

Description

XP6N100JV Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Rg & UIS Test D ▼ Simple Drive Requirement ▼ Fast Switching Characte.
XP6N100 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance.

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Datasheet Specifications

Part number: XP6N100JV
Manufacturer: YAGEO
File Size: 159.82 KB
Datasheet: XP6N100JV-YAGEO.pdf
Description: N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Applications

* The TO-251VS short lead package is preferred for all commercialindustrial through-hole applications without lead-cutted. BVDSS RDS(ON) ID 60V 100mΩ 7.5A GD S TO-251VS(JV) Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol Parameter Rating Units VDS VGS ID@TC=25℃ ID@TC=100

XP6N100JV Distributors

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XP6N100JV N-CHANNEL ENHANCEMENT MODE POWER MOSFET YAGEO

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