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XP6N6R8ALH N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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Description

XP6N6R8ALH Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Rg & UIS Test D ▼ Simple Drive Requirement ▼ Fast Switching Charact.
XP6N6R8AL series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance.

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Datasheet Specifications

Part number
XP6N6R8ALH
Manufacturer
YAGEO
File Size
215.82 KB
Datasheet
XP6N6R8ALH-YAGEO.pdf
Description
N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Applications

* BVDSS RDS(ON) ID 60V 6.8mΩ 65A G D S TO-252(H) The TO-252 package is widely preferred for all commercial-industrial surface mount applications using infrared reflow technique and suited for high current application due to the low connection resistance. Absolute Maximum Ratings@Tj=25oC(unless

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