XP6N6R8ALM N-CHANNEL ENHANCEMENT MODE POWER MOSFET

YAGEO

Description

XP6N6R8ALM Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement ▼ Fast Switching Characteristic ▼ Surface Mount De.
XP6N6R8AL series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance.

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Datasheet Specifications

Part number: XP6N6R8ALM
Manufacturer: YAGEO
File Size: 244.31 KB
Datasheet: XP6N6R8ALM-YAGEO.pdf
Description: N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Applications

* The SO-8 package is widely preferred for all commercial-industrial surface mount applications using infrared reflow technique and suited for voltage conversion or switch applications. BVDSS RDS(ON) ID3 G 60V 6.8mΩ 14.7A D S Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol P

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XP6N6R8ALM N-CHANNEL ENHANCEMENT MODE POWER MOSFET YAGEO

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