XP9T18GH N-CHANNEL ENHANCEMENT MODE POWER MOSFET

YAGEO

Description

XP9T18GH Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low Gate Charge ▼ Capable of 2.5V Gate Drive ▼ Fast Switching Characteristic .
XP9T18 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance.

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Datasheet Specifications

Part number: XP9T18GH
Manufacturer: YAGEO
File Size: 210.18 KB
Datasheet: XP9T18GH-YAGEO.pdf
Description: N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Applications

* The TO-252 package is widely preferred for all commercial-industrial surface mount applications using infrared reflow technique and suited for high current application due to the low connection resistance. BVDSS RDS(ON) ID 20V 14mΩ 38A G DS TO-252(H) Absolute Maximum Ratings@Tj=25oC(unless oth

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XP9T18GH N-CHANNEL ENHANCEMENT MODE POWER MOSFET YAGEO

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