Datasheet4U Logo Datasheet4U.com

YJB150N06BQ

N-Channel Enhancement Mode Field Effect Transistor

Download Datasheet (529.20 KB)

Preview of YJB150N06BQ Datasheet

Datasheet Details

Part number:

YJB150N06BQ

Manufacturer:

Yangzhou Yangjie

File Size:

529.20 KB

Description:

N-channel enhancement mode field effect transistor.
YJB150N06BQ RoHS COMPLIANT N-Channel Enhancement Mode Field Effect Transistor Product Summary * V.
* Trench Power MV MOSFET technology * Excellent package for heat dissipation * High density cell des.

✔ YJB150N06BQ Application

📁 Related Datasheet

YJ162-1 - YJ162-1 (ETC)
.

YJ60A - Single-cell lithium battery power indicator (YENJI)
Y J 60A ■ Y J 60A , CMOS ,,。 LY JN60A , 4 。 ,±1%。 OPENDRAIN , IO LED 。 ■  :<10uA  4 , 4  ,。  :±2% ■   LED  ■  SOT23-6L D1 D2 D.

YJD15N10A - N-Channel Enhancement Mode Field Effect Transistor (Yangzhou Yangjie)
YJD15N10A RoHS COMPLIANT N-Channel Enhancement Mode Field Effect Transistor Product Summary ● VDS ● ID ● RDS(ON)( at VGS=10V) ● RDS(ON)( at VGS=4.5.

YJD80G06A - N-Channel Enhancement Mode Field Effect Transistor (Yangzhou Yangjie)
YJD80G06A RoHS COMPLIANT N-Channel Enhancement Mode Field Effect Transistor Product Summary ● VDS ● ID ● RDS(ON)( at VGS=10V) ● RDS(ON)( at VGS=4.5.

YJG25GP10A - P-Channel Enhancement Mode Field Effect Transistor (Yangzhou Yangjie)
YJG25GP10A RoHS COMPLIANT P-Channel Enhancement Mode Field Effect Transistor Product Summary ● VDS ● ID ● RDS(ON)( at VGS=-10V) ● RDS(ON)( at VGS=-.

YJG25GP10AQ - P-Channel 100V MOSFET (VBsemi)
YJG25GP10AQ-VB YJG25GP10AQ-VB Datasheet P-Channel 1 00-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () - 100 0.075 at VGS = - 10 V 0.08 0 at V.

TAGS

YJB150N06BQ N-Channel Enhancement Mode Field Effect Transistor Yangzhou Yangjie

Image Gallery

YJB150N06BQ Datasheet Preview Page 2 YJB150N06BQ Datasheet Preview Page 3

YJB150N06BQ Distributor