YJB150N06BQ Datasheet - Yangzhou Yangjie

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YJB150N06BQ N-Channel Enhancement Mode Field Effect Transistor

YJB150N06BQ RoHS COMPLIANT N-Channel Enhancement Mode Field Effect Transistor Product Summary * VDS * ID * RDS(ON)( at VGS=10V) * 1.
Trench Power MV MOSFET technology. Excellent package for heat dissipation. High density cell design for low RDS(ON) Applications.

YJB150N06BQ-YangzhouYangjie.pdf

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Datasheet Details

Part number:

YJB150N06BQ

Manufacturer:

Yangzhou Yangjie

File Size:

529.20 KB

Description:

N-Channel Enhancement Mode Field Effect Transistor

Applications

* DC-DC Converters
* Power management functions
* Industrial and Motor Drive applications
* Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-source Voltage Gate-source Voltage Drain Current Pulsed Drain Current A TC=25℃ TC=100℃ Total

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YJB150N06BQ N-Channel Enhancement Mode Field Effect Transistor Yangzhou Yangjie

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