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YJB150N06BQ Datasheet - Yangzhou Yangjie

YJB150N06BQ N-Channel Enhancement Mode Field Effect Transistor

* Trench Power MV MOSFET technology * Excellent package for heat dissipation * High density cell design for low RDS(ON) Applications * DC-DC Converters * Power management functions * Industrial and Motor Drive applications * Absolute Maximum Ratings (TA=25℃unless otherw.

YJB150N06BQ-YangzhouYangjie.pdf

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Datasheet Details

Part number:

YJB150N06BQ

Manufacturer:

Yangzhou Yangjie

File Size:

529.20 KB

Description:

N-channel enhancement mode field effect transistor.

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