YJB150N06BQ - N-Channel Enhancement Mode Field Effect Transistor

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Trench Power MV MOSFET technology Excellent package for heat dissipation High density cell design for low RDS(ON) Applications DC-DC Converters Power management functions Industrial and Motor Drive applications Absolute Maximum Ratings (TA=25℃unless otherw

Yangzhou Yangjie

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Part number	YJB150N06BQ
Manufacturer	Yangzhou Yangjie
File Size	529.20 KB
Description	N-Channel Enhancement Mode Field Effect Transistor
Datasheet	YJB150N06BQ Datasheet
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YJB150N06BQ RoHS COMPLIANT N-Channel Enhancement Mode Field Effect Transistor Product Summary ● VDS ● ID ● RDS(ON)( at VGS=10V) ● 100% UIS Tested ● 100% ▽VDS Tested 60V 150A ＜5.

Published: Mar 13, 2019 |