| Image | Manufacturer | B2B MPN | Description | Distributor | Stock | Quantity | Price | Buy Now |
|---|---|---|---|---|---|---|---|---|
 |
Yangzhou Yangjie Electronics Co Ltd | YJD80G06A | Transistor: N-MOSFET; SPLIT GATE TRENCH; unipolar; 60V; 56A; 42.5W | TME | 2325 | 2500 units |
$0.18
|
🛒 Buy Now |
Download Datasheet (635.01 KB)
YJD80G06A
Yangzhou Yangjie
635.01 KB
N-channel enhancement mode field effect transistor.
YJD80G06A
RoHS
COMPLIANT
N-Channel Enhancement Mode Field Effect Transistor
Product Summary
* VDS.
* Split Gate Trench MOSFET technology * Excellent package for heat dissipation * High density cell d.
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