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YJH03N10A Datasheet - Yangzhou Yangjie

YJH03N10A N-Channel Enhancement Mode Field Effect Transistor

* Trench Power MV MOSFET technology * Excellent package for heat dissipation * High density cell design for low RDS(ON) Applications * DC-DC Converters * Power management functions * Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Limit Unit Dr.

YJH03N10A-YangzhouYangjie.pdf

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Datasheet Details

Part number:

YJH03N10A

Manufacturer:

Yangzhou Yangjie

File Size:

422.16 KB

Description:

N-channel enhancement mode field effect transistor.

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