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ZXT14N50DX - 50V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR

Description

This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give extremely low on state losses.

This makes it ideal for high efficiency, low voltage switching applications.

Features

  • Extremely Low Equivalent On Resistance Extremely Low Saturation Voltage hFE characterised up to 12A IC=6A Continuous Collector Current MSOP8 package C B.

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ZXT14N50DX SuperSOT4™ 50V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR SUMMARY VCEO=50V; RSAT = 17m ; IC= 6A DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give extremely low on state losses. This makes it ideal for high efficiency, low voltage switching applications.
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