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ZXTS1000E6 12V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR AND SCHOTTKY DIODE

ZXTS1000E6 Description

ZXTS1000E6 12V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR AND SCHOTTKY DIODE SUMMARY Transistor: VCEO=-12V, I C= -1.25A Schottky Diode: VR=40V; I.
A PNP transistor and a Schottky Barrier diode contained in a single 6 leaded SOT23 package.

ZXTS1000E6 Applications

* ORDERING INFORMATION DEVICE ZXTS1000E6TA ZXTS1000E6TC DEVICE MARKING 1000 REEL SIZE (inches) 7 13 TAPE WIDTH (mm) 8mm embossed 8mm embossed QUANTITY PER REEL 3000 units 10000 units Top View ISSUE 1 - NOVEMBER 2000 1 ZXTS1000E6 ABSOLUTE MAXIMUM RATINGS. PARAMETER Transistor Collector-Base Voltage

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Datasheet Details

Part number
ZXTS1000E6
Manufacturer
Zetex Semiconductors
File Size
193.97 KB
Datasheet
ZXTS1000E6_ZetexSemiconductors.pdf
Description
12V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR AND SCHOTTKY DIODE

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12V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR AND SCHOTTKY DIODE Zetex Semiconductors
Zetex Semiconductors ZXTS1000E6-like datasheet