CSD22206WT Datasheet - Texas Instruments

CSD22206WT P-Channel Power MOSFET

This *8-V, 4.7-mΩ, 1.5-mm × 1.5-mm device is designed to deliver the lowest on resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra-low profile. Low on resistance coupled with the small footprint and low profile make the device ideal .

CSD22206WT Features

* 1 Ultra-Low Resistance

* Small Footprint 1.5 mm × 1.5 mm

* Lead Free

* Gate ESD Protection

* RoHS Compliant

* Halogen Free

* Gate-Source Voltage Clamp Product Summary TA = 25°C VDS Drain-to-Source Voltage Qg Gate Charge Total (

* 4

CSD22206WT Datasheet (951.77 KB)