CSD23201W10 - P-Channel Power MOSFET
The device has been designed to deliver the lowest on resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra low profile.
Top View D D G S PRODUCT SUMMARY VDS Drain to Source Voltage *12 V Qg Gate Charge Total (4.5V) 1.8 nC
CSD23201W10 Features
* 1
* Ultra Low Qg and Qgd
* Small Footprint 1mm × 1mm
* Low Profile 0.62mm Height
* Pb Free
* Gate ESD Protection
* 3kV
* RoHS Compliant
* Halogen Free APPLICATIONS
* Battery Management
* Load Switch
* Battery Pro
