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CSD23201W10 - P-Channel Power MOSFET

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CSD23201W10 Product details

Description

The device has been designed to deliver the lowest on resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra low profile. 12 V Qg Gate Charge Total (4.5V) 1.8 nC Qgd Gate Charge Gate to Drain 0.26 nC VGS = 1.5V 110 mΩ RDS(on) Drain to Source On Resistance VGS = 2.5V 77 mΩ VGS = 4.5V 66 mΩ VGS(th) Threshold Voltage

Features

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