CSD23202W10T - P-Channel Power MOSFET
This 12 V, 44 mΩ device is designed to deliver the lowest on-resistance and gate charge in a small 1 mm × 1 mm outline with excellent thermal characteristics in an ultra-low profile.
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Top View D D G S P0097-01 .
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Product Summary TA = 25°C VDS Drain-to-Source Voltage Qg Gate Char
CSD23202W10T Features
* 1 Ultra-Low Qg and Qgd
* Small Footprint 1 mm × 1 mm
* Low Profile 0.62-mm Height
* Pb Free
* Gate ESD Protection
* 3 kV
* RoHS Compliant
* Halogen Free 2 Applications
* Battery Management
* Load Switch
* Batter
