CSD23203WT - P-Channel Power MOSFET
This 16.2-mΩ, *8-V, P-Channel device is designed to deliver the lowest on-resistance and gate charge in a small 1 × 1.5 mm outline with excellent thermal characteristics in an ultra-low profile.
Top View D S G D S S Product Summary TA = 25°C VDS Drain-to-Source Voltage Qg Gate Ch
CSD23203WT Features
* 1 Ultra-Low Qg and Qgd
* Low RDS(on)
* Small Footprint
* Low Profile 0.62-mm Height
* Lead Free
* RoHS Compliant
* Halogen Free
* CSP 1-mm × 1.5-mm Wafer Level Package 2 Applications
* Battery Management
* Load Switch
