CSD23203WT Datasheet - Texas Instruments

CSD23203WT P-Channel Power MOSFET

This 16.2-mΩ, *8-V, P-Channel device is designed to deliver the lowest on-resistance and gate charge in a small 1 × 1.5 mm outline with excellent thermal characteristics in an ultra-low profile. Top View D S G D S S Product Summary TA = 25°C VDS Drain-to-Source Voltage Qg Gate Ch.

CSD23203WT Features

* 1 Ultra-Low Qg and Qgd

* Low RDS(on)

* Small Footprint

* Low Profile 0.62-mm Height

* Lead Free

* RoHS Compliant

* Halogen Free

* CSP 1-mm × 1.5-mm Wafer Level Package 2 Applications

* Battery Management

* Load Switch

CSD23203WT Datasheet (975.23 KB)