CSD23280F3 Datasheet - Texas Instruments

CSD23280F3 P-Channel Power MOSFET

This *12-V, 97-mΩ, P-Channel FemtoFET™ MOSFET is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing a substantial reduction in footprint size. Product Summary TA = .

CSD23280F3 Features

* 1 Low On-Resistance

* Ultra-Low Qg and Qgd

* High-Operating Drain Current

* Ultra-Small Footprint

* 0.73 mm × 0.64 mm

* Ultra-Low Profile

* 0.35-mm Max Height

* Integrated ESD Protection Diode

* Rated > 4-kV HBM

* Rated

CSD23280F3-etcTI.pdf