Part number:
10N80
Manufacturer:
nELL
File Size:
323.58 KB
Description:
N-channel power mosfet.
* RDS(ON) = 1.1Ω @ VGS = 10V Ultra low gate charge(58nC max.) Low reverse transfer capacitance (CRSS = 15pF typical) Fast switching capability 100% avalanche energy specified Improved dv/dt capability 150°C operation temperature D G D S TO-3PB (10N80B) GDS TO-220F (10N80AF) D (Drain) G (Gate) S
10N80
nELL
323.58 KB
N-channel power mosfet.
📁 Related Datasheet
10N80 - N-Channel MOSFET
(Inchange Semiconductor)
isc N-Channel MOSFET Transistor
FEATURES ·Drain Current –ID= 10A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 800V(Min) ·Static Drain-Source On-Resistance
.
10N80 - N-CHANNEL POWER MOSFET
(Unisonic Technologies)
UNISONIC TECHNOLOGIES CO., LTD 10N80
10A, 800V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 10N80 uses UTC’s advanced proprietary, planar stripe, DMO.
10N80-CQ - N-CHANNEL POWER MOSFET
(UTC)
UNISONIC TECHNOLOGIES CO., LTD
10N80-CQ
10A, 800V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 10N80-CQ provide excellent RDS(ON), low gate charge and.
10N80-FC - N-CHANNEL POWER MOSFET
(UTC)
UNISONIC TECHNOLOGIES CO., LTD 10N80-FC
10A, 800V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 10N80-FC provide excellent RDS(ON), low gate charge and.
10N80C - 800V N-Channel MOSFET
(Fairchild Semiconductor)
FQA10N80C 800V N-Channel MOSFET
FQA10N80C
800V N-Channel MOSFET
Features
• 10A, 800V, RDS(on) = 1.1Ω @VGS = 10 V • Low gate charge ( typical 44 nC) •.
10N03L - IPP10N03L
(Infineon Technologies AG)
IPP10N03L IPB10N03L OptiMOS® Buck converter series
Feature
• N-Channel
Product Summary VDS RDS(on) max. SMD version ID
P- TO263 -3-2
30 8.9 73
P- TO.
10N100-FL - 1000V N-CHANNEL POWER MOSFET
(UTC)
UNISONIC TECHNOLOGIES CO., LTD
10N100-FL
10A, 1000V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 10N100-FL is a high voltage power MOSFET bines adv.
10N12 - N-Channel MOSFET
(INCHANGE)
isc N-Channel Mosfet Transistor
·FEATURES ·Drain Current –ID= 10A@ TC=25℃ ·Drain Source Voltage- : VDSS= 120V(Min) ·Static Drain-Source On-Resistance.
