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2N60

N-Channel Power MOSFET

2N60 Features

* RDS(ON) = 5.0Ω@VGS = 10V Ultra low gate charge(11nC max.) Low reverse transfer capacitance (CRSS = 5pF typical) Fast switching capability 100% avalanche energy specified Improved dv/dt capability 150°C operation temperature D GDS TO-251 (I-PAK) (2N60F) D D G S TO-252 (D-PAK) (2N60G) GDS TO-220AB

2N60 General Description

The Nell 2N60 is a three-terminal silicon device with current conduction capability of 2A, fast switching speed, low on-state resistance, breakdown voltage rating of 600V, and max. threshold voltage of 4 volts. They are designed for use in applications such as switched mode power supplies, DC to DC .

2N60 Datasheet (366.57 KB)

Preview of 2N60 PDF

Datasheet Details

Part number:

2N60

Manufacturer:

nELL

File Size:

366.57 KB

Description:

N-channel power mosfet.

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2N60 N-Channel Power MOSFET nELL

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