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IRF730

N-Channel Power MOSFET

IRF730 Features

* RDS(ON) = 1.00Ω @ VGS = 10V Ultra low gate charge(22nC Max.) Low reverse transfer capacitance (CRSS = 4pF typical) Fast switching capability 100% avalanche energy specified Improved dv/dt capability 150°C operation temperature D GDS TO-220AB (IRF730A) D (Drain) G (Gate) S (Source) PRODUCT

IRF730 General Description

The Nell IRF730 are N-Channel enhancement mode silicon gate power field effect transistors. They are designed, tested and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. They are designed as an extremely efficient and reliable device for use in a wi.

IRF730 Datasheet (315.62 KB)

Preview of IRF730 PDF

Datasheet Details

Part number:

IRF730

Manufacturer:

nELL

File Size:

315.62 KB

Description:

N-channel power mosfet.

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TAGS

IRF730 N-Channel Power MOSFET nELL

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