Datasheet4U Logo Datasheet4U.com

BUK6M61-60P P-channel Trench MOSFET

BUK6M61-60P Description

BUK6M61-60P 60 V, P-channel Trench MOSFET 2 September 2024 Product data sheet 1.General .
P-channel enhancement mode Field-Effect Transistor (FET) in an LFPAK33 package using Trench MOSFET technology.

BUK6M61-60P Features

* High thermal power dissipation capability
* Suitable for thermally demanding environments due to 175 °C rating
* Trench MOSFET technology

📥 Download Datasheet

Preview of BUK6M61-60P PDF
datasheet Preview Page 2 datasheet Preview Page 3

📁 Related Datasheet

  • BUK6207-30C - N-channel TrenchMOS intermediate level FET (NXP Semiconductors)
  • BUK6207-55C - N-Channel MOSFET (NXP Semiconductors)
  • BUK6208-40C - N-channel TrenchMOS intermediate level FET (NXP)
  • BUK6209-30C - N-channel TrenchMOS intermediate level FET (NXP)
  • BUK6210-55C - N-Channel MOSFET (NXP Semiconductors)
  • BUK6211-75C - N-channel TrenchMOS FET (NXP Semiconductors)
  • BUK6212-40C - N-channel TrenchMOS intermediate level FET (NXP)
  • BUK6213-30A - N-Channel MOSFET (NXP Semiconductors)

📌 All Tags

P-channel Trench MOSFET nexperia
nexperia BUK6M61-60P-like datasheet