Datasheet Details
- Part number
- PDTC123YMB
- Manufacturer
- nexperia ↗
- File Size
- 489.78 KB
- Datasheet
- PDTC123YMB-nexperia.pdf
- Description
- NPN resistor-equipped transistor
PDTC123YMB Description
SOT883B PDTC123YMB NPN resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 10 kΩ Rev.1 * 11 June 2012 Product data sheet 1.Product profile .
NPN Resistor-Equipped Transistor (RET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package.
PDTC123YMB Features
* 100 mA output current capability
* Reduces component count
* Built-in bias resistors
* Reduces pick and place costs
* Simplifies circuit design
* AEC-Q101 qualified
* Leadless ultra small SMD plastic
package
PDTC123YMB Applications
* Low-current peripheral driver
* Control of IC inputs
* Replaces general-purpose transistors in digital applications
* Mobile applications
1.4 Quick reference data
Table 1. Symbol VCEO
IO R1 R2/R1
Quick reference data Parameter collector-emitter voltage output current bias resis
📁 Related Datasheet
📌 All Tags
PDTC123YMB Stock/Price