PMCXB900UE complementary N/P-channel Trench MOSFET

nexperia

Description

PMCXB900UE 20 V, complementary N/P-channel Trench MOSFET 30 June 2015 Product data sheet 1.General .
Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) p.

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Datasheet Specifications

Part number: PMCXB900UE
Manufacturer: nexperia ↗
File Size: 780.84 KB
Datasheet: PMCXB900UE-nexperia.pdf
Description: complementary N/P-channel Trench MOSFET

Features

* Trench MOSFET technology

Applications

* VGS(th) = 0.7 V
* Leadless ultra small and ultra thin SMD plastic package: 1.1 × 1.0 × 0.37 mm
* ElectroStatic Discharge (ESD) protection > 1 kV HBM 3. Applications
* Relay driver
* High-speed line driver
* Level shifter
* Power management in battery

PMCXB900UE Distributors

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PMCXB900UE complementary P-channel Trench MOSFET nexperia

nexperia PMCXB900UE-like datasheet