PMCXB900UE

complementary N/P-channel Trench MOSFET

nexperia

* Trench MOSFET technology

* Very low threshold voltage for portable applications: VGS(th) = 0.7 V

* Leadless ultra small and ultra thin SMD plastic package: 1.1 × 1.0 × 0.37 mm

* ElectroStatic Discharge (ESD) protection > 1 kV HBM 3. Applications

* Relay dri

PMCXB900UE

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Complementary n/p-channel trench mosfet.

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PMCXB900UE complementary P-channel Trench MOSFET nexperia

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