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PMDT290UNE dual N-channel MOSFET

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Description

PMDT290UNE 20 V, 800 mA dual N-channel Trench MOSFET 28 December 2022 Product data sheet 1.General .
Dual N-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package usin.

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Features

* Very fast switching
* Trench MOSFET technology

Applications

* Relay driver
* High-speed line driver
* Low-side loadswitch
* Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Per transistor VDS drain-source voltage Tj = 25 °C VGS gate-source voltage ID drain current

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