Datasheet4U Logo Datasheet4U.com

PMDT670UPE dual P-channel MOSFET

PMDT670UPE Description

PMDT670UPE 20 V, 550 mA dual P-channel Trench MOSFET Rev.1 * 13 September 2011 Product data sheet 1.Product profile 1.1 General descrip.
Dual P-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package usin.

PMDT670UPE Features

* Very fast switching
* Trench MOSFET technology
* ESD protection up to 2 kV

PMDT670UPE Applications

* Relay driver
* High-speed line driver
* High-side loadswitch
* Switching circuits 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Per transistor VDS drain-source voltage VGS gate-source voltage ID drain current Static characteristics (per

📥 Download Datasheet

Preview of PMDT670UPE PDF
datasheet Preview Page 2 datasheet Preview Page 3

📁 Related Datasheet

  • PMDT290UCE - 800 / 550 mA N/P-channel Trench MOSFET (NXP Semiconductors)
  • PMDT290UNE - 800mA dual N-channel Trench MOSFET (NXP)
  • PMD02N60N - N-Channel MOSFETs (Potens semiconductor)
  • PMD03N80R - N-Channel MOSFETs (Potens semiconductor)
  • PMD04N65M - N-Channel MOSFETs (Potens semiconductor)
  • PMD05N50M - N-Channel MOSFETs (Potens semiconductor)
  • PMD10K - SILICON POWER DARLING TRANSISTORSl (Central Semiconductor Corp)
  • PMD10K100 - SILICON POWER DARLING TRANSISTORSl (Central Semiconductor Corp)

📌 All Tags

dual P-channel MOSFET nexperia
nexperia PMDT670UPE-like datasheet