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PMV50UPE P-channel MOSFET

PMV50UPE Description

PMV50UPE 20 V, single P-channel Trench MOSFET 20 July 2012 Product data sheet 1.Product profile 1.1 General .
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET.

PMV50UPE Features

* 3 kV ESD protected
* Trench MOSFET technology

PMV50UPE Applications

* Relay driver
* High-side loadswitch
* Switching circuits 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tj = 25 °C - - -20 V VGS gate-source voltage -8 - 8V ID drain current VGS = -4

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