PSMN1R0-30YLD Datasheet - nexperia

PSMN1R0-30YLD N-channel MOSFET

300 Amp Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3 portfolio utilising Nexperia’s unique “SchottkyPlus” technology delivers high efficiency, low spiking performance usually associated with MOSFETs with an integrated Schottky or Schottky-like diode but wi.

PSMN1R0-30YLD Features

* 300 Amp capability

* Avalanche rated, 100 % tested at I(as) = 190 Amps

* Ultra low QG, QGD and QOSS for high system efficiency, especially at higher switching frequencies

* Superfast switching with soft-recovery; s-factor > 1

* Low spiking and ringing for lo

PSMN1R0-30YLD Datasheet (304.00 KB)