PSMNR51-25YLH Datasheet - nexperia

PSMNR51-25YLH, N-channel MOSFET

PSMNR51-25YLH N-channel 25 V, 0.57 mΩ, 380 A logic level MOSFET in LFPAK56E using NextPowerS3 technology 30 September 2019 Product data sheet 1..
Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56E package optimized for low RDSon, low IDSS leakage even when hot, high efficiency.

Features

* 100% avalanche tested at I(AS) = 190 A
* Optimized for low RDSon
* Low leakage < 1 μA at 25 °C
* Low spiking and ringing for low EMI designs
* Optimized for 4.5 V gate drive
* Copper-clip for low parasitic inductance and resistance
* High rel

PSMNR51-25YLH-nexperia.pdf