PSMNR51-25YLH - N-channel MOSFET

nexperia

PSMNR51-25YLH Datasheet Preview — Preview of PSMNR51-25YLH PDF

Datasheet Details

Part number	PSMNR51-25YLH
Manufacturer	nexperia ↗
File Size	290.43 KB
Description	N-channel MOSFET
Datasheet	PSMNR51-25YLH-nexperia.pdf

PSMNR51-25YLH Product details

Description

Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56E package optimized for low RDSon, low IDSS leakage even when hot, high efficiency and high current.

Features

100% avalanche tested at I(AS) = 190 A.
Optimized for low RDSon.
Low leakage < 1 μA at 25 °C.
Low spiking and ringing for low EMI designs.
Optimized for 4.5 V gate drive.
Copper-clip for low parasitic inductance and resistance.
High reliability LFPAK package, qualified to 175 °C.
Wave solderable; exposed leads for optimal solder coverage and visual solder inspection 3.

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Published: Jul 28, 2019 |