* 100% avalanche tested at I(AS) = 190 A
* Optimized for low RDSon
* Low leakage < 1 μA at 25 °C
* Low spiking and ringing for low EMI designs
* Optimized for 4.5 V gate drive
* Copper-clip for low parasitic inductance and resistance
* High rel
PSMNR51-25YLH Datasheet (290.43 KB)
PSMNR51-25YLH
290.43 KB
N-channel mosfet.
PSMNR51-25YLH
N-channel 25 V, 0.57 mΩ, 380 A logic level MOSFET in
LFPAK56E using NextPowerS3 technology
30 September 2019
Product data sheet
1. .
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