* 100% avalanche tested at I(AS) = 190 A
* Optimized for low RDSon
* Low leakage < 1 μA at 25 °C
* Low spiking and ringing for low EMI designs
* Optimized for 4.5 V gate drive
* Copper-clip for low parasitic inductance and resistance
* High rel
PSMNR60-25YLH Datasheet (303.71 KB)
PSMNR60-25YLH
303.71 KB
N-channel mosfet.
PSMNR60-25YLH
N-channel 25 V, 0.7 mΩ, 300 A logic level MOSFET in
LFPAK56 using NextPowerS3 technology
30 September 2019
Product data sheet
1. Ge.
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