* 100% avalanche tested at I(AS) = 190 A
* Optimized for low RDSon
* Low leakage < 1 µA at 25 °C
* Low spiking and ringing for low EMI designs
* Optimized for 4.5 V gate drive
* Copper-clip for low parasitic inductance and resistance
* High rel
PSMNR70-30YLH Datasheet (307.24 KB)
PSMNR70-30YLH
307.24 KB
N-channel mosfet.
PSMNR70-30YLH
N-channel 30 V, 0.82 mΩ, 300 A logic level MOSFET in
LFPAK56 using NextPowerS3 technology
11 January 2019
Product data sheet
1. Gen.
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