PSMNR58-30YLH Datasheet - nexperia

PSMNR58-30YLH N-channel MOSFET

PSMNR58-30YLH Features

* 100% avalanche tested at I(AS) = 190 A

* Optimized for low RDSon

* Low leakage < 1 µA at 25 °C

* Low spiking and ringing for low EMI designs

* Optimized for 4.5 V gate drive

* Copper-clip for low parasitic inductance and resistance

* High rel

Datasheet Details

PSMNR58-30YLH

291.68 KB

N-channel mosfet.

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