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NTBL023N065M3S SiC MOSFET

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Description

DATA SHEET www.onsemi.com Silicon Carbide (SiC) MOSFET * EliteSiC, 23 mohm, 650 V, M3S, TOLL NTBL023N065M3S .

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Datasheet Specifications

Part number
NTBL023N065M3S
Manufacturer
onsemi
File Size
518.47 KB
Datasheet
NTBL023N065M3S-onsemi.pdf
Description
SiC MOSFET

Features

* Typical RDS(on) = 23 mW @ VGS = 18 V
* Ultra Low Gate Charge (QG(tot) = 69 nC)
* High Speed Switching with Low Capacitance (Coss = 152 pF)
* 100% Avalanche Tested
* This Device is Halide Free and RoHS Compliant with Exemption 7a, Pb
* Free 2LI (on seco

Applications

* SMPS (Switching Mode Power Supplies)
* Solar Inverters
* UPS (Uninterruptable Power Supplies)
* Energy Storage
* Infrastructure MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain
* to
* Source Voltage VDSS

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