NTBL050N65S3H Datasheet - ON Semiconductor

N-Channel MOSFET

NTBL050N65S3H Features

* 700 V @ TJ = 150°C

* Typ. RDS(on) = 40 mW

* Ultra Low Gate Charge (Typ. Qg = 98 nC)

* Low Effective Output Capacitance (Typ. Coss(eff.) = 909 pF)

* 100% Avalanche Tested

* Kelvin Source Configuration and Low Parasitic Source Inductance

* MSL1

NTBL050N65S3H General Description

SUPERFET III MOSFET is ON Semiconductor’s brand *new high voltage super *junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on *resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss.

NTBL050N65S3H Datasheet (287.95 KB)