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NTBL075N065SC1 SiC MOSFET

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Description

Silicon Carbide (SiC) MOSFET - EliteSiC, 56 mohm, 650 V, M2, TOLL NTBL075N065SC1 .

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Features

* Typ. RDS(on) = 56 mW @ VGS = 18 V Typ. RDS(on) = 75 mW @ VGS = 15 V
* Ultra Low Gate Charge (QG(tot) = 59 nC)
* Low Effective Output Capacitance (Coss = 109 pF)
* 100% Avalanche Tested
* TJ = 175°C

Applications

* SMPS (Switching Mode Power Supplies)
* Solar Inverters
* UPS (Uninterruptable Power Supplies)
* Energy Storage MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Drain
* to
* Source Voltage Gate
* to
* Source Voltage Recommended O

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