FD3401 - P-Channel Enhancement Mode Power MOSFET

semi one

Datasheet Details

The FD3401 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

VDS = -12V,ID = -3A RDS(ON) < 85 m Ω @ VGS=-2.5V RDS(ON) < 65 m Ω @ VGS=-4.5V FD3401 D G S Schematic diagram.
High Power and current handing capability.
Lead free product is acquired.
Surface Mount Package Marking and pin Assignment Application.
PWM.

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