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PED2510L N-Channel Enhancement Mode Power MOSFET

PED2510L Description

PED2510L N-Channel Enhancement Mode Power MOSFET .
The PED2510L uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.

PED2510L Features

* VDS = 20V,ID =8A RDS(ON) = 14mΩ @ VGS=2.5V RDS(ON) = 10mΩ @ VGS=4.5V ESD Rating: 2000V HBM
* High power and current handing capability
* Lead free product is acquired

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Datasheet Details

Part number
PED2510L
Manufacturer
semi one
File Size
914.54 KB
Datasheet
PED2510L-semione.pdf
Description
N-Channel Enhancement Mode Power MOSFET

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N-Channel Enhancement Mode Power MOSFET semi one
semi one PED2510L-like datasheet