PED2510L

N-Channel Enhancement Mode Power MOSFET

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Datasheet Details

Part number:

PED2510L

Manufacturer:

semi one

File Size:

914.54 KB

Description:

N-channel enhancement mode power mosfet.
PED2510L N-Channel Enhancement Mode Power MOSFET Description The PED2510L uses advanced trench tech.
The PED2510L uses advanced trench technology to provide excellent RDS(ON), low gate charge and opera.

✔ PED2510L Features

VDS = 20V,ID =8A RDS(ON) = 14mΩ @ VGS=2.5V RDS(ON) = 10mΩ @ VGS=4.5V ESD Rating: 2000V HBM
High power and current handing capability
Lead free product is acquired

✔ PED2510L Application

.It is ESD protested. General Features
VDS = 20V,ID =8A RDS(ON) = 14mΩ @ VGS=2.5V RDS(ON) = 10mΩ @ VGS=4.

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TAGS

PED2510L N-Channel Enhancement Mode Power MOSFET semi one

Datasheet Details

File Size:

Description:

✔ PED2510L Features

✔ PED2510L Application

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