PED2510L - N-Channel Enhancement Mode Power MOSFET

semi one

The PED2510L by semi one is a N-Channel Enhancement Mode Power MOSFET. Below is the official datasheet preview.

Datasheet Details

Part number	PED2510L
Manufacturer	semi one
File Size	914.54 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	PED2510L-semione.pdf
Additional preview pages of the PED2510L datasheet.

The PED2510L uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V.

VDS = 20V,ID =8A RDS(ON) = 14mΩ @ VGS=2.5V RDS(ON) = 10mΩ @ VGS=4.5V ESD Rating: 2000V HBM.
High power and current handing capability.
Lead free product is acquired.
Surface mount package Schematic diagram S1 S2 S1 D1/D2 S2 G1 G2 Marking and pin Assignment.

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Published: Dec 3, 2018 |