PED8810M - N-Channel Enhancement Mode Power MOSFET

semi one

The PED8810M by semi one is a N-Channel Enhancement Mode Power MOSFET. Below is the official datasheet preview.

Datasheet Details

Part number	PED8810M
Manufacturer	semi one
File Size	226.33 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	PED8810M-semione.pdf
Additional preview pages of the PED8810M datasheet.

The PED8810M uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

VDS = 20V,ID =7A RDS(ON) < 25mΩ @ VGS=2.5V RDS(ON) < 20mΩ @ VGS=4.5V ESD Rating: 2000V HBM.
High Power and current handing capability.
Lead free product is acquired.
Surface Mount Package.

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Published: Dec 3, 2018 |