ACE Technology ACE2308E
N-Channel MOSFET
| Part No. | ACE2308E |
|---|---|
| Datasheet | ACE2308E Download |
| Manufacturer |  ACE Technology |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
● Low rDS(on) trench technology● Low thermal impedance
● Fast switching speed
APPLICATIONS
● Power Routing● Li Ion Battery Packs
● Level Shifting and Driver Circuits
ABSOLUTE MAXIMUM RATINGS
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current a TA=25℃ TA=70℃ Pulse Drain Current b Continuous Source Current (Diode Conduction) a Power Dissipation a TA=25℃ TA=70℃ Operating Temperature / Storage Temperature *1 Pw ≦10 μs, Duty cycle ≦1 % *2 When mounted on a 1*0.75*0.062 inch glass epoxy board% Symbol Limit VDS 30 VGS ±12 3.5 ID 2.8 IDM 15 IS 1.9 1.3 PD 0.8 TJ/TSTG -55/150 Units V V A A A W OC THERMAL RESISTANCE RATINGS Parameter Symbol Maximum Maximum Junction-to-Ambient a t <= 10 sec Steady State RθJA 100 166 Units OC/W Packaging Type SOT-23-3 D GS VER 1.1 1 ACE2308E N-Channel 30-V MOSFET Ordering information ACE2308EBM + H Halogen - free Pb - free BM : SOT-23-3ELECTRICAL CHARACTERISTICS
(TA=25℃, unless otherwise specified) Parameter Gate-Source Threshol...
