SSC8029GN2 datasheet by AFSEMI.
| Part number | SSC8029GN2 |
|---|---|
| Datasheet | SSC8029GN2-AFSEMI.pdf |
| File Size | 605.65 KB |
| Manufacturer | AFSEMI |
| Description | P-Channel Enhancement Mode MOSFET |
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This device is produced with high cell density DMOS trench technology, Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device particularly suits low voltage applications such as portable equipment, power management and other battery powered circuits, and low in-line power dissipation are needed in a very small outline surface mount package. Excellent thermal and...
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