SSC8029GN2
SSC8029GN2 is P-Channel Enhancement Mode MOSFET manufactured by AFSEMI.
Features
VDS -20V
VGS ±12V
RDSon TYP 21m R@-4V5 26m R@-2V5 35m R@-1V8 45m R@-1V5
ID -6.5A
- Applications
- Load Switch
- Portable Devices
- DCDC conversion
- Charging
- Driver for Relay,Solenoid,Motor,LED etc.
- - General Description
This device is produced with high cell density DMOS trench technology, Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device particularly suits low voltage applications such as portable equipment, power management and other battery powered circuits, and low in-line power dissipation are needed in a very small outline surface mount package. Excellent thermal and electrical capabilities.
Pin Configuration
Top View
D: Drain; G: Gate; S: Source
- Package Information
SSC-1V0 http://.afsemi.
1/5
Analog Future
- Absolute Maximum Ratings @TA=25℃ unless otherwise noted
Parameter
Symbol
Drain-Source...
