Datasheet4U Logo Datasheet4U.com

SSC8029GN2 - P-Channel Enhancement Mode MOSFET

Description

This device is produced with high cell density DMOS trench technology, Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge.

Features

  • s VDS -20V VGS ±12V RDSon TYP 21mR@-4V5 26mR@-2V5 35mR@-1V8 45mR@-1V5 ID -6.5A.

📥 Download Datasheet

Datasheet preview – SSC8029GN2

Datasheet Details

Part number SSC8029GN2
Manufacturer AFSEMI
File Size 605.65 KB
Description P-Channel Enhancement Mode MOSFET
Datasheet download datasheet SSC8029GN2 Datasheet
Additional preview pages of the SSC8029GN2 datasheet.

📁 Similar Datasheet

  • SSC8033GS3 - P-Channel Enhancement Mode MOSFET (SPIRIT-SEMI)
  • SSC8035GS6 - P-Channel MOSFET (VBsemi)
  • SSC-AM101 - CHIP LED DEVICE (Seoul Semiconductor)
  • SSC-AWT722 - TOP LED DEVICE (Seoul Semiconductor)
  • SSC-CMX2 - Clip Addressable Output Module (Firesense)
  • SSC-D3232SL-88 - LED DOT MATRIX (Seoul Semiconductor)
  • SSC-ERT801 - TOP LED DEVICE (Seoul Semiconductor)
  • SSC-FAT801 - TOP LED DEVICE (Seoul Semiconductor)
  • SSC-FB102 - LED DEVICE (Seoul Semiconductor)
  • SSC-HB601 - LED DEVICE (Seoul Semiconductor)
Other Datasheets by AFSEMI

Full PDF Text Transcription

Click to expand full text
SSC8029GN2 P-Channel Enhancement Mode MOSFET  Features VDS -20V VGS ±12V RDSon TYP 21mR@-4V5 26mR@-2V5 35mR@-1V8 45mR@-1V5 ID -6.5A  Applications  Load Switch  Portable Devices  DCDC conversion  Charging  Driver for Relay,Solenoid,Motor,LED etc.   General Description This device is produced with high cell density DMOS trench technology, Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device particularly suits low voltage applications such as portable equipment, power management and other battery powered circuits, and low in-line power dissipation are needed in a very small outline surface mount package. Excellent thermal and electrical capabilities.
Published: |