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SSC8029GS6A Datasheet P-channel Enhancement Mode MOSFET

Manufacturer: AFSEMI

Overview: SSC8029GS6A P-Channel Enhancement Mode MOSFET .

Datasheet Details

Part number SSC8029GS6A
Manufacturer AFSEMI
File Size 592.47 KB
Description P-Channel Enhancement Mode MOSFET
Datasheet SSC8029GS6A-AFSEMI.pdf

General Description

This device is produced with high cell density DMOS trench technology, Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge.

This device particularly suits low voltage applications such as portable equipment, power management and other battery powered circuits, and low in-line power dissipation are needed in a very small outline surface mount package.

Excellent thermal and electrical capabilities.

Key Features

  • s VDS -20V VGS ±12V RDSon TYP 21mR@-4V5 26mR@-2V5 35mR@-1V8 45mR@-1V5 ID -6.5A.

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