SSC8036GN2
SSC8036GN2 is N-Channel Enhancement Mode MOSFET manufactured by AFSEMI.
Features
- VDS 30V
VGS ±20V
RDSon TYP 19m R@10V 32m R@4V5
ID 7A
- - General Description
This device uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications.
Applications
- Load Switch
- Portable Devices
- DCDC conversion
Pin configuration
Top View
- Package Information
SSC-V1.0 http://.afsemi.
1/6
Analog Future
- Absolute Maximum Ratings @ TA = 25°C unless otherwise specified
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 1 VGS@10V TC = 25°C Continuous Drain Current 1 VGS@10V TC = 100°C Continuous Drain Current 2 VGS@10V TA = 25°C Continuous Drain Current 2 VGS@10V TA = 70°C Plused Drain Current 3 Repetitive avalanche energy L=0.1m H 3 Power Dissipation 1 TC = 25°C Power Dissipation 1 TC = 100°C Power Dissipation 2 TA = 25°C Power Dissipation 2 TA = 70°C...
