SSC8036GN3
SSC8036GN3 is N-Channel Enhancement Mode MOSFET manufactured by AFSEMI.
Features
- Applications
VDS 30V
VGS ±20V
RDSon TYP 21m R@10V 32m R@4V5
ID 8.5A
- Load Switch
- Portable Devices
- DCDC conversion
- General Description
- Pin configuration
This device uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications.
- Package Information
Package:DFN3X2
SSC-V1.0 http://.afsemi.
1/5
Analog Future
Absolute Maximum Ratings @ TA = 25°C unless otherwise specified
Parameter
Symbol
Drain-Source Voltage
VDSS
Gate-Source Voltage
VGSS
Drain Current Total Power Dissipation (note1)
Continuous Pulse TA = 25°C TA = 75°C
ID IDM
Operating and Storage Junction Temperature Range Note1: Surface Mounted on 1in2 pad area.
TJ, TSTG
- Electrical Characteristics @ TA = 25°C unless otherwise specified
Ratings 30 ±20 8.5 50 3 2.1
-55 to +150
Unit V V A
W °C
Parameter(not...
